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Part Datasheet Search > MOSFETs > International Rectifier > IRF5210L Datasheet PDF
IRF5210L
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IRF5210L Datasheet PDF (11 Pages)
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IRF5210L Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
-100 V
Current Rating
-40.0 A
Case/Package
TO-262
Polarity
P-Channel
Power Dissipation
200 W
Part Family
IRF5210L
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
-100 V
Continuous Drain Current (Ids)
40.0 A
Rise Time
86.0 ns

IRF5210L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk

IRF5210L Documents

International Rectifier
11 Pages / 0.18 MByte
International Rectifier
10 Pages / 0.18 MByte

IRF5210 Documents

International Rectifier
Trans MOSFET P-CH 100V 40A 3Pin(3+Tab) TO-220AB
Infineon
TO-220AB P-CH 100V 40A
Semelab
40A, 100V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
TT Electronics Resistors
Power Field-Effect Transistor, 40A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
New Jersey Semiconductor
Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.06Ω, Id=-40A)
Infineon
TO-220AB P-CH 100V 40A
Infineon
D2PAK P-CH 100V 38A
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.06Ω; ID -40A; TO-220AB; PD 200W; VGS +/-20
International Rectifier
INTERNATIONAL RECTIFIER IRF5210STRLPBF MOSFET Transistor, P Channel, 40A, 100V, 60mohm, -10V, 4V
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