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Part Datasheet Search > MOSFETs > Infineon > IRF5210PBF Datasheet PDF
IRF5210PBF
$ 0.531
IRF5210PBF Datasheet PDF (9 Pages)
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IRF5210PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
200 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.06 Ω
Polarity
P-CH
Power Dissipation
200 W
Threshold Voltage
4 V
Input Capacitance
2700 pF
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
40A
Rise Time
86 ns
Input Capacitance (Ciss)
2700pF @25V(Vds)
Input Power (Max)
200 W
Fall Time
81 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200W (Tc)

IRF5210PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.54 mm
Size-Width
4.69 mm
Size-Height
8.77 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF5210PBF Documents

Infineon
9 Pages / 0.18 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.11 MByte
Infineon
1 Pages / 0.14 MByte

IRF5210 Documents

International Rectifier
Trans MOSFET P-CH 100V 40A 3Pin(3+Tab) TO-220AB
Infineon
TO-220AB P-CH 100V 40A
Semelab
40A, 100V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
TT Electronics Resistors
Power Field-Effect Transistor, 40A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
New Jersey Semiconductor
Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.06Ω, Id=-40A)
Infineon
TO-220AB P-CH 100V 40A
Infineon
D2PAK P-CH 100V 38A
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.06Ω; ID -40A; TO-220AB; PD 200W; VGS +/-20
International Rectifier
INTERNATIONAL RECTIFIER IRF5210STRLPBF MOSFET Transistor, P Channel, 40A, 100V, 60mohm, -10V, 4V
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