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IRF5210S
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IRF5210S Datasheet PDF (11 Pages)
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IRF5210S Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-40.0 A
Case/Package
TO-263
Polarity
P-Channel
Power Dissipation
3.80 W
Part Family
IRF5210S
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
-100 V
Continuous Drain Current (Ids)
40.0 A
Rise Time
86 ns
Input Capacitance (Ciss)
2700pF @25V(Vds)
Fall Time
81 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3800 mW

IRF5210S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
End of Life
Packaging
Tape & Reel (TR)
Material
Silicon

IRF5210S Documents

Infineon
11 Pages / 0.28 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
10 Pages / 0.18 MByte
Infineon
37 Pages / 2.01 MByte

IRF5210 Documents

International Rectifier
Trans MOSFET P-CH 100V 40A 3Pin(3+Tab) TO-220AB
Infineon
TO-220AB P-CH 100V 40A
Semelab
40A, 100V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
TT Electronics Resistors
Power Field-Effect Transistor, 40A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
New Jersey Semiconductor
Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.06Ω, Id=-40A)
Infineon
TO-220AB P-CH 100V 40A
Infineon
D2PAK P-CH 100V 38A
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.06Ω; ID -40A; TO-220AB; PD 200W; VGS +/-20
International Rectifier
INTERNATIONAL RECTIFIER IRF5210STRLPBF MOSFET Transistor, P Channel, 40A, 100V, 60mohm, -10V, 4V
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