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Part Datasheet Search > MOSFETs > Infineon > IRF5305STRRPBF Datasheet PDF
IRF5305STRRPBF
$ 1.108
IRF5305STRRPBF Datasheet PDF (11 Pages)
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IRF5305STRRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Channels
1 Channel
Polarity
P-Channel
Power Dissipation
3.8 W
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
31A
Rise Time
66 ns
Input Capacitance (Ciss)
1200pF @25V(Vds)
Fall Time
63 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.8W (Ta), 110W (Tc)

IRF5305STRRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Width
6.22 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF5305STRRPBF Documents

Infineon
11 Pages / 0.68 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
9 Pages / 0.14 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF5305 Documents

International Rectifier
P-Channel MOSFET, Vdss = -55V, Rds = 0.06Ω, Id = -31A, TO-220
Infineon
TO-220AB P-CH 55V 31A
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.06Ω, Id=-31A)
Kersemi Electronic
HEXFET® Power MOSFET
SHENZHENFREESCALE
HEXFET® Power MOSFET
New Jersey Semiconductor
Trans MOSFET P-CH 55V 31A 3Pin(3+Tab) TO-220ABO
Infineon
TO-220AB P-CH 55V 31A
Infineon
D2PAK P-CH 55V 31A
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ω; ID -31A; TO-220AB; PD 110W; VGS +/-20V
Infineon
D2PAK P-CH 55V 31A
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