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Part Datasheet Search > N Channel MOSFET > International Rectifier > IRF530N Datasheet PDF
IRF530N
$ 0.181
IRF530N Datasheet PDF (9 Pages)
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IRF530N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
17.0 A
Case/Package
TO-220
Drain to Source Resistance (on) (Rds)
90.0 mΩ
Polarity
N-Channel
Power Dissipation
70.0 W
Part Family
IRF530N
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100V (min)
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
17.0 A
Rise Time
22.0 ns

IRF530N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

IRF530N Documents

International Rectifier
9 Pages / 0.21 MByte

IRF530 Documents

VISHAY
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220AB
ST Microelectronics
Trans MOSFET N-CH 100V 14A 3Pin(3+Tab) TO-220
International Rectifier
MOSFET N-CH 100V 14A TO-220
Vishay Siliconix
MOSFET N-CH 100V 14A TO-220AB
ON Semiconductor
TMOS POWER FET 14 AMPERES, 100 VOLTS RDS(on) = 0.14Ω
Fairchild
Trans MOSFET N-CH Si 100V 14A 3Pin(3+Tab) TO-220AB
Motorola
N-channel MOSFET, 60V, 14A
Harris
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated
Infineon
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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