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IRF540S
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IRF540S Datasheet PDF (9 Pages)
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IRF540S Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-263-3
Power Dissipation
3.7W (Ta), 150W (Tc)
Drain to Source Voltage (Vds)
100 V
Input Capacitance (Ciss)
1700pF @25V(Vds)
Power Dissipation (Max)
3.7W (Ta), 150W (Tc)

IRF540S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF540S Documents

Vishay Siliconix
9 Pages / 0.2 MByte
Vishay Siliconix
9 Pages / 0.16 MByte

IRF540 Documents

VISHAY
Trans MOSFET N-CH 100V 28A 3Pin(3+Tab) TO-220AB
ST Microelectronics
22A, 100V, 0.077Ω, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3Pin
International Rectifier
MOSFET N-CH 100V 22A TO-220
Vishay Semiconductor
Trans MOSFET N-CH 100V 28A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
Trans MOSFET N-CH 100V 28A 3Pin(3+Tab) TO-220AB
NXP
23A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN
ON Semiconductor
27A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN
Fairchild
Trans MOSFET N-CH Si 100V 28A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Philips
N-channel TrenchMOS transistor
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