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Part Datasheet Search > MOSFETs > Infineon > IRF5803D2TR Datasheet PDF
IRF5803D2TR
Part 3D Model
$ 0.085
IRF5803D2TR Datasheet PDF (11 Pages)
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IRF5803D2TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOIC-8
Polarity
P-CH
Power Dissipation
2W (Ta)
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
3.4A
Input Capacitance (Ciss)
1110pF @25V(Vds)
Power Dissipation (Max)
2W (Ta)

IRF5803D2TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF5803D2TR Documents

Infineon
11 Pages / 0.12 MByte
Infineon
14 Pages / 0.17 MByte

IRF5803D2 Documents

Infineon
SOIC P-CH 40V 3.4A
International Rectifier
MOSFET P-CH 40V 3.4A 8-SOIC
IRF
FETKY⑩ MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112Ω)
Infineon
SOIC P-CH 40V 3.4A
International Rectifier
Trans MOSFET P-CH 40V 3.4A 8Pin SOIC T/R
Infineon
SOIC P-CH 40V 3.4A
International Rectifier
Trans MOSFET P-CH Si 40V 3.4A 8Pin SOIC
International Rectifier
MOSFET P-CH 40V 3.4A 8-SOIC
Infineon
SOIC P-CH 40V 3.4A
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