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Part Datasheet Search > MOSFETs > Infineon > IRF5803D2TRPBF Datasheet PDF
IRF5803D2TRPBF
Part 3D Model
$ 0.112
IRF5803D2TRPBF Datasheet PDF (11 Pages)
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IRF5803D2TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2 W
Drain to Source Resistance (on) (Rds)
0.112 Ω
Polarity
P-CH
Power Dissipation
2 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
3.4A
Rise Time
550 ns
Input Capacitance (Ciss)
1110pF @25V(Vds)
Input Power (Max)
2 W
Fall Time
50 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2W (Ta)

IRF5803D2TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF5803D2TRPBF Documents

Infineon
11 Pages / 0.13 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte

IRF5803D2 Documents

Infineon
SOIC P-CH 40V 3.4A
International Rectifier
MOSFET P-CH 40V 3.4A 8-SOIC
IRF
FETKY⑩ MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112Ω)
Infineon
SOIC P-CH 40V 3.4A
International Rectifier
Trans MOSFET P-CH 40V 3.4A 8Pin SOIC T/R
Infineon
SOIC P-CH 40V 3.4A
International Rectifier
Trans MOSFET P-CH Si 40V 3.4A 8Pin SOIC
International Rectifier
MOSFET P-CH 40V 3.4A 8-SOIC
Infineon
SOIC P-CH 40V 3.4A
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