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IRF610PBF
$ 0.498

IRF610PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
3.30 A
Case/Package
TO-220-3
Power Rating
36 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.5 Ω
Polarity
N-Channel
Power Dissipation
36 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
3.30 A
Rise Time
17 ns
Input Capacitance (Ciss)
140pF @25V(Vds)
Input Power (Max)
36 W
Fall Time
8.9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
36W (Tc)

IRF610PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
50

IRF610PBF Documents

VISHAY
7 Pages / 0.92 MByte
VISHAY
10 Pages / 0.22 MByte
VISHAY
3 Pages / 0.14 MByte

IRF610 Documents

International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
VISHAY
MOSFET N-CH 200V 3.3A TO-220AB
Intersil
Trans MOSFET N-CH 200V 3.3A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 200V 3.3A TO-220AB
Harris
MOSFET N-CH 200V 3.3A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 3.3A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH Si 200V 2.5A 3Pin(3+Tab) TO-220AB
Motorola
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Samsung
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Microsemi
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
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