Web Analytics
Part Datasheet Search > MOSFETs > Vishay Siliconix > IRF610PBF Datasheet PDF
IRF610PBF
$ 0.324
IRF610PBF Datasheet PDF (8 Pages)
View Datasheet
Click page to view the detail

IRF610PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
36W (Tc)
Drain to Source Voltage (Vds)
200 V
Input Capacitance (Ciss)
140pF @25V(Vds)
Input Power (Max)
36 W
Power Dissipation (Max)
36W (Tc)

IRF610PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF610PBF Documents

Vishay Siliconix
8 Pages / 0.36 MByte
Vishay Siliconix
9 Pages / 0.27 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRF610 Documents

International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
VISHAY
MOSFET N-CH 200V 3.3A TO-220AB
Intersil
Trans MOSFET N-CH 200V 3.3A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 200V 3.3A TO-220AB
Harris
MOSFET N-CH 200V 3.3A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 3.3A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH Si 200V 2.5A 3Pin(3+Tab) TO-220AB
Motorola
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Samsung
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
National Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,3.3A I(D),TO-220AB
Part Datasheet PDF Search
Loading...
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Relate Parts

Relate Documentations: IRF610 Datasheet
BOM Matching Tool
Matching parts
Alternative parts
Warning risks
Computing costs
Upload BOM File
File format: *.xlsx, *.xls, *.csv
Online 3D Gerber Viewer
Modeling in 15s
Preview PCB
40 types of layers
Preflight Risk
Upload Gerber File
Support standard RS-274X file, accept zip rar or 7z