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Part Datasheet Search > MOSFETs > Infineon > IRF6201PBF Datasheet PDF
IRF6201PBF
Part 3D Model
$ 0.214
IRF6201PBF Datasheet PDF (10 Pages)
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IRF6201PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0019 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
1.1 V
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20 V
Continuous Drain Current (Ids)
27A
Rise Time
100 ns
Input Capacitance (Ciss)
8555pF @16V(Vds)
Fall Time
265 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF6201PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF6201PBF Documents

Infineon
10 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
12 Pages / 0.47 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
8 Pages / 0.11 MByte

IRF6201 Documents

Infineon
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 20V 27A
Infineon
SOIC N-CH 20V 27A
International Rectifier
Trans MOSFET N-CH 20V 27A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH 20V 27A 8Pin SOIC T/R
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