IRF630 Datasheet PDF - ST Microelectronics

●The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company"s consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.

● Drain to source voltage (Vds) is 200V

● Gate to source voltage of ±20V

● Continuous drain current (Id) is 9A

● Power dissipation (Pd) is 75W

● Operating junction temperature range from -65°C to 150°C

● Gate threshold voltage of 3V

● Low on state resistance of 350mohm at Vgs 10V