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Part Datasheet Search > MOSFETs > Fairchild > IRF634B_FP001 Datasheet PDF
IRF634B_FP001
$ 0.489
IRF634B_FP001 Datasheet PDF (10 Pages)
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IRF634B_FP001 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
450 mΩ
Polarity
N-Channel
Power Dissipation
74 W
Drain to Source Voltage (Vds)
250 V
Breakdown Voltage (Drain to Source)
250 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
8.10 A
Rise Time
75 ns
Input Capacitance (Ciss)
1000pF @25V(Vds)
Fall Time
65 ns
Power Dissipation (Max)
74W (Tc)

IRF634B_FP001 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Rail, Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF634B_FP001 Documents

Fairchild
10 Pages / 0.83 MByte
Fairchild
8 Pages / 0.62 MByte
Fairchild
1 Pages / 0.09 MByte

IRF634 Documents

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N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
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MOSFET N-CH 250V 8.1A TO-220AB
Vishay Siliconix
MOSFET N-CH 250V 8.1A TO-220AB
Fairchild
Advanced Power MOSFET
Vishay Semiconductor
Trans MOSFET N-CH 250V 8.1A 3Pin(3+Tab) TO-220AB
Infineon
Infineon Technologies IRF634, MOSFET N channel 8.1A 250V
Intersil
Transistors
Microsemi
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
Harris
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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