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IRF634PBF
$ 0.474
IRF634PBF Datasheet PDF (7 Pages)
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IRF634PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
74 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.45 Ω
Polarity
N-Channel
Power Dissipation
74 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
250 V
Continuous Drain Current (Ids)
8.10 A
Rise Time
21 ns
Input Capacitance (Ciss)
770pF @25V(Vds)
Input Power (Max)
74 W
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
74 W

IRF634PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
50

IRF634PBF Documents

VISHAY
7 Pages / 3.48 MByte
VISHAY
9 Pages / 0.26 MByte

IRF634 Documents

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Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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