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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRF634SPBF Datasheet PDF
IRF634SPBF
$ 0.752
IRF634SPBF Datasheet PDF (9 Pages)
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IRF634SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
450 mΩ
Polarity
N-Channel
Power Dissipation
74 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
250 V
Continuous Drain Current (Ids)
8.10 A
Operating Temperature (Max)
150 ℃

IRF634SPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube

IRF634SPBF Documents

Vishay Semiconductor
9 Pages / 0.3 MByte
Vishay Semiconductor
9 Pages / 0.16 MByte

IRF634 Documents

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N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
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MOSFET N-CH 250V 8.1A TO-220AB
Vishay Siliconix
MOSFET N-CH 250V 8.1A TO-220AB
Fairchild
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Vishay Semiconductor
Trans MOSFET N-CH 250V 8.1A 3Pin(3+Tab) TO-220AB
Infineon
Infineon Technologies IRF634, MOSFET N channel 8.1A 250V
Intersil
Transistors
Microsemi
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
Harris
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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