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IRF640N
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IRF640N Datasheet PDF (12 Pages)
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IRF640N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
18.0 A
Case/Package
TO-220
Drain to Source Resistance (on) (Rds)
150 mΩ (max)
Polarity
N-CH
Part Family
IRF640N
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200V (min)
Continuous Drain Current (Ids)
18.0 A
Rise Time
19 ns
Input Capacitance (Ciss)
1160pF @25V(Vds)
Fall Time
5.5 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150000 mW

IRF640N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon

IRF640N Documents

Infineon
12 Pages / 0.23 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRF640 Documents

ST Microelectronics
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220 Tube
International Rectifier
n-Channel 200V - 0.15Ω - 18A To-220/To-220fp Mesh Overlay Mosfet
Vishay Siliconix
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 200V 18A 3Pin (3+Tab) TO-220AB
VISHAY
MOSFET N-CH 200V 18A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB
ON Semiconductor
Trans MOSFET N-CH 200V 18A 3Pin (3+Tab) TO-220AB
NXP
16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Samsung
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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