$ 1.52

IRF640NPBF Datasheet PDF - International Rectifier

Manufacturer:

International Rectifier

Category:

MOSFETs

Case Package:

TO-220-3

Description:

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.15Ω; ID 18A; TO-220AB; PD 150W; VGS +/-20V

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Documentation:

IRF640NPBF Datasheet (12 Pages)

Package Outline Dimension on8 Page 9 Page 10 Page

IRF640NPBF Datasheet PDF (12 Pages)

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IRF640NPBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

200 V

Current Rating

18.0 A

Case/Package

TO-220-3

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.15 Ω

Polarity

N-Channel

Power Dissipation

150 W

Part Family

IRF640N

Threshold Voltage

4 V

Input Capacitance

1160pF @25V

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Drain to Source)

200 V

Continuous Drain Current (Ids)

18.0 A

Rise Time

19.0 ns

Thermal Resistance

1℃/W (RθJC)

Input Capacitance (Ciss)

1160pF @25V(Vds)

Input Power (Max)

150 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

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IRF640NPBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.67 mm

Size-Width

4.4 mm

Size-Height

9.02 mm

Operating Temperature

-55℃ ~ 175℃

View Datasheet >

IRF640NPBF Environmental

IRF640NPBF Function Overview

IRF640NPBF Documents

IRF640NPBF Datasheet

International Rectifier

12 Pages / 0.32 MByte

IRF640NPBF Other Datasheet PDF

International Rectifier

20 Pages / 2.6 MByte

IRF640NPBF Notice File

International Rectifier

5 Pages / 0.04 MByte

IRF640NPBF Product Catalog

International Rectifier

12 Pages / 0.29 MByte

IRF640 Documents

IRF640 Datasheet PDF

ST Microelectronics

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Vishay Siliconix

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Fairchild

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VISHAY

MOSFET N-CH 200V 18A TO-220AB

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Vishay Semiconductor

Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB

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ON Semiconductor

Trans MOSFET N-CH 200V 18A 3Pin (3+Tab) TO-220AB

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NXP

16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN

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Infineon

Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

IRF640 Datasheet PDF

Samsung

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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