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Part Datasheet Search > MOSFETs > International Rectifier > IRF640NSTRLPBF Datasheet PDF
IRF640NSTRLPBF
$ 0.27
IRF640NSTRLPBF Datasheet PDF (11 Pages)
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IRF640NSTRLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
18.0 A
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
0.15 Ω
Polarity
N-Channel
Power Dissipation
150 W
Part Family
IRF640NS
Input Capacitance
1160pF @25V
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
18.0 A
Rise Time
19.0 ns
Thermal Resistance
1℃/W (RθJC)
Input Capacitance (Ciss)
1160pF @25V(Vds)
Input Power (Max)
150 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRF640NSTRLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 175℃

IRF640NSTRLPBF Documents

International Rectifier
11 Pages / 0.32 MByte

IRF640 Documents

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Infineon
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Samsung
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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