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Part Datasheet Search > MOSFETs > Infineon > IRF640NSTRRPBF Datasheet PDF
IRF640NSTRRPBF
$ 0.946
IRF640NSTRRPBF Datasheet PDF (11 Pages)
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IRF640NSTRRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Channels
1 Channel
Polarity
N-Channel
Power Dissipation
150 W
Threshold Voltage
2V ~ 4V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
18A
Rise Time
19 ns
Input Capacitance (Ciss)
1160pF @25V(Vds)
Input Power (Max)
150 W
Fall Time
5.5 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150W (Tc)

IRF640NSTRRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Width
6.22 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF640NSTRRPBF Documents

Infineon
11 Pages / 0.32 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF640 Documents

ST Microelectronics
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220 Tube
International Rectifier
n-Channel 200V - 0.15Ω - 18A To-220/To-220fp Mesh Overlay Mosfet
Vishay Siliconix
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 200V 18A 3Pin (3+Tab) TO-220AB
VISHAY
MOSFET N-CH 200V 18A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB
ON Semiconductor
Trans MOSFET N-CH 200V 18A 3Pin (3+Tab) TO-220AB
NXP
16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Samsung
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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