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Part Datasheet Search > MOSFETs > VISHAY > IRF640SPBF Datasheet PDF
IRF640SPBF
$ 1.218
IRF640SPBF Datasheet PDF (8 Pages)
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IRF640SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.18 Ω
Polarity
N-Channel
Power Dissipation
130 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
18.0 A
Rise Time
51 ns
Input Capacitance (Ciss)
1300pF @25V(Vds)
Input Power (Max)
130 W
Fall Time
36 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
130 W

IRF640SPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2000

IRF640SPBF Documents

VISHAY
8 Pages / 0.13 MByte
VISHAY
9 Pages / 0.19 MByte
VISHAY
3 Pages / 0.06 MByte

IRF640 Documents

ST Microelectronics
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220 Tube
International Rectifier
n-Channel 200V - 0.15Ω - 18A To-220/To-220fp Mesh Overlay Mosfet
Vishay Siliconix
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 200V 18A 3Pin (3+Tab) TO-220AB
VISHAY
MOSFET N-CH 200V 18A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB
ON Semiconductor
Trans MOSFET N-CH 200V 18A 3Pin (3+Tab) TO-220AB
NXP
16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Samsung
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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