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Part Datasheet Search > MOSFETs > VISHAY > IRF640STRRPBF Datasheet PDF
IRF640STRRPBF
$ 0.597
IRF640STRRPBF Datasheet PDF (11 Pages)
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IRF640STRRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
180 mΩ
Polarity
N-Channel
Power Dissipation
3.1 W
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
18.0 A
Rise Time
51 ns
Input Capacitance (Ciss)
1300pF @25V(Vds)
Fall Time
36 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.1W (Ta), 130W (Tc)

IRF640STRRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
2000

IRF640STRRPBF Documents

VISHAY
11 Pages / 0.94 MByte
VISHAY
10 Pages / 0.19 MByte

IRF640 Documents

ST Microelectronics
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220 Tube
International Rectifier
n-Channel 200V - 0.15Ω - 18A To-220/To-220fp Mesh Overlay Mosfet
Vishay Siliconix
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 200V 18A 3Pin (3+Tab) TO-220AB
VISHAY
MOSFET N-CH 200V 18A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB
ON Semiconductor
Trans MOSFET N-CH 200V 18A 3Pin (3+Tab) TO-220AB
NXP
16A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN
Infineon
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
National Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,18A I(D),TO-220AB
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