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Part Datasheet Search > MOSFETs > Fairchild > IRF644B_FP001 Datasheet PDF
IRF644B_FP001
$ 0.458
IRF644B_FP001 Datasheet PDF (20 Pages)
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IRF644B_FP001 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
280 mΩ
Polarity
N-Channel
Power Dissipation
139 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
250 V
Breakdown Voltage (Drain to Source)
-30.0 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
14.0 A
Input Capacitance (Ciss)
1600pF @25V(Vds)
Input Power (Max)
139 W
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
139W (Tc)

IRF644B_FP001 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Rail
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF644B_FP001 Documents

Fairchild
20 Pages / 0.89 MByte
Fairchild
10 Pages / 0.87 MByte
Fairchild
1 Pages / 0.09 MByte
Fairchild
4 Pages / 0.5 MByte

IRF644 Documents

VISHAY
TO-220AB N-CH 250V 14A
International Rectifier
MOSFET N-CH 250V 14A TO-220AB
Vishay Siliconix
MOSFET N-CH 250V 14A TO-220AB
Harris
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild
250V N-Channel MOSFET
Vishay Semiconductor
Trans MOSFET N-CH 250V 14A 3Pin(3+Tab) TO-220AB
Intersil
STANDARD POWER MOSFETs N-CHANNEL TO-220AB PACKAGE
ST Microelectronics
MOSFET N-Ch 250V 14A
Samsung
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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