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IRF644NPBF
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IRF644NPBF Datasheet PDF (8 Pages)
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IRF644NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220
Polarity
N-CH
Drain to Source Voltage (Vds)
250 V
Continuous Drain Current (Ids)
14A
Rise Time
21 ns
Input Capacitance (Ciss)
1060pF @25V(Vds)
Fall Time
17 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150000 mW

IRF644NPBF Size & Package

TYPE
DESCRIPTION
Material
Silicon

IRF644NPBF Documents

VISHAY
8 Pages / 0.14 MByte
VISHAY
12 Pages / 0.28 MByte

IRF644 Documents

VISHAY
TO-220AB N-CH 250V 14A
International Rectifier
MOSFET N-CH 250V 14A TO-220AB
Vishay Siliconix
MOSFET N-CH 250V 14A TO-220AB
Harris
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild
250V N-Channel MOSFET
Vishay Semiconductor
Trans MOSFET N-CH 250V 14A 3Pin(3+Tab) TO-220AB
Intersil
STANDARD POWER MOSFETs N-CHANNEL TO-220AB PACKAGE
ST Microelectronics
MOSFET N-Ch 250V 14A
Samsung
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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