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IRF644PBF
$ 1.089
IRF644PBF Datasheet PDF (8 Pages)
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IRF644PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
250 V
Current Rating
14.0 A
Case/Package
TO-220-3
Power Rating
125 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.28 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
250 V
Breakdown Voltage (Drain to Source)
250 V
Continuous Drain Current (Ids)
14.0 A
Rise Time
24 ns
Input Capacitance (Ciss)
1300pF @25V(Vds)
Input Power (Max)
125 W
Fall Time
49 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125 W

IRF644PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
50

IRF644PBF Documents

VISHAY
8 Pages / 0.28 MByte
VISHAY
9 Pages / 0.16 MByte
VISHAY
2 Pages / 0.06 MByte

IRF644 Documents

VISHAY
TO-220AB N-CH 250V 14A
International Rectifier
MOSFET N-CH 250V 14A TO-220AB
Vishay Siliconix
MOSFET N-CH 250V 14A TO-220AB
Harris
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild
250V N-Channel MOSFET
Vishay Semiconductor
Trans MOSFET N-CH 250V 14A 3Pin(3+Tab) TO-220AB
Intersil
STANDARD POWER MOSFETs N-CHANNEL TO-220AB PACKAGE
ST Microelectronics
MOSFET N-Ch 250V 14A
Samsung
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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