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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRF644SPBF Datasheet PDF
IRF644SPBF
$ 4.867
IRF644SPBF Datasheet PDF (9 Pages)
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IRF644SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
280 mΩ
Power Dissipation
3.1W (Ta), 125W (Tc)
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
250 V
Input Capacitance (Ciss)
1300pF @25V(Vds)
Power Dissipation (Max)
3.1W (Ta), 125W (Tc)

IRF644SPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF644SPBF Documents

Vishay Siliconix
9 Pages / 0.16 MByte
Vishay Siliconix
3 Pages / 0.06 MByte

IRF644 Documents

VISHAY
TO-220AB N-CH 250V 14A
International Rectifier
MOSFET N-CH 250V 14A TO-220AB
Vishay Siliconix
MOSFET N-CH 250V 14A TO-220AB
Harris
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild
250V N-Channel MOSFET
Vishay Semiconductor
Trans MOSFET N-CH 250V 14A 3Pin(3+Tab) TO-220AB
Intersil
STANDARD POWER MOSFETs N-CHANNEL TO-220AB PACKAGE
ST Microelectronics
MOSFET N-Ch 250V 14A
Samsung
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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