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Part Datasheet Search > MOSFETs > Infineon > IRF6613TRPBF Datasheet PDF
IRF6613TRPBF
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IRF6613TRPBF Datasheet PDF (9 Pages)
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IRF6613TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
Direct-FET
Power Rating
89 W
Number of Positions
7 Position
Drain to Source Resistance (on) (Rds)
0.0026 Ω
Polarity
N-Channel
Power Dissipation
89 W
Threshold Voltage
2.25 V
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
23A
Rise Time
47 ns
Input Capacitance (Ciss)
5950pF @15V(Vds)
Input Power (Max)
2.8 W
Fall Time
4.9 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)

IRF6613TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6613TRPBF Documents

Infineon
9 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRF6613 Documents

International Rectifier
Trans MOSFET N-CH Si 40V 23A 7Pin Direct-FET MT
Infineon
Direct-FET N-CH 40V 23A
Infineon
Direct-FET N-CH 40V 23A
International Rectifier
Trans MOSFET N-CH 40V 23A 7Pin Direct-FET MT T/R
International Rectifier
Trans MOSFET N-CH Si 40V 23A 7Pin Direct-FET MT T/R
Infineon
Direct-FET N-CH 40V 23A
International Rectifier
Trans MOSFET N-CH 40V 23A 7Pin Direct-FET MT T/R
Infineon
Direct-FET N-CH 40V 23A
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