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IRF6648TR1
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IRF6648TR1 Datasheet PDF (10 Pages)
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IRF6648TR1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
Direct-FET
Number of Positions
7 Position
Drain to Source Resistance (on) (Rds)
0.0055 Ω
Polarity
N-CH
Power Dissipation
2.8 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
86A
Rise Time
29 ns
Input Capacitance (Ciss)
2120pF @25V(Vds)
Fall Time
13 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)

IRF6648TR1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6648TR1 Documents

Infineon
10 Pages / 0.26 MByte
Infineon
1 Pages / 0.13 MByte

IRF6648 Documents

Infineon
Direct-FET N-CH 60V 86A
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Direct-FET N-CH 60V 86A
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Single N-Channel 60V 2.8W 36NC SMT Power Mosfet - DirectFETIsometric MN
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Trans MOSFET N-CH Si 60V 86A 7Pin Direct-FET MN T/R
Infineon
Direct-FET N-CH 60V 86A
International Rectifier
Trans MOSFET N-CH Si 60V 86A 7Pin Direct-FET MN T/R
Infineon
Direct-FET N-CH 60V 86A
Infineon
Direct-FET N-CH 60V 86A
IFC
N-Channel 60V 5.5mΩ 36NC SMT Power Mosfet - DirectFET™ Isometric MN
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