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Part Datasheet Search > MOSFETs > Infineon > IRF6665TR1PBF Datasheet PDF
IRF6665TR1PBF
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IRF6665TR1PBF Datasheet PDF (10 Pages)
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IRF6665TR1PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
5 Pin
Case/Package
Direct-FET
Power Rating
42 W
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
0.053 Ω
Polarity
N-CH
Power Dissipation
2.2 mW
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
4.2A
Rise Time
2.8 ns
Input Capacitance (Ciss)
530pF @25V(Vds)
Input Power (Max)
2.2 W
Fall Time
4.3 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)

IRF6665TR1PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
4.85 mm
Size-Width
3.95 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6665TR1PBF Documents

Infineon
10 Pages / 0.22 MByte
Infineon
6 Pages / 0.12 MByte

IRF6665TR1 Documents

Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH T/R
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH T/R
Infineon
Direct-FET N-CH 100V 4.2A
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