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Part Datasheet Search > MOSFETs > Infineon > IRF6712STRPBF Datasheet PDF
IRF6712STRPBF
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IRF6712STRPBF Datasheet PDF (9 Pages)
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IRF6712STRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
Direct-FET
Power Rating
36 W
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.0038 Ω
Polarity
N-Channel
Power Dissipation
2.2 W
Threshold Voltage
1.9 V
Input Capacitance
1570 pF
Drain to Source Voltage (Vds)
25 V
Continuous Drain Current (Ids)
17A
Rise Time
40 ns
Input Capacitance (Ciss)
1570pF @13V(Vds)
Input Power (Max)
2.2 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.2W (Ta), 36W (Tc)

IRF6712STRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
4.85 mm
Size-Width
3.95 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6712STRPBF Documents

Infineon
9 Pages / 0.23 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRF6712 Documents

Infineon
Direct-FET N-CH 25V 17A
International Rectifier
Trans MOSFET N-CH 25V 17A 6Pin Direct-FET SQ T/R
International Rectifier
Single N-Channel 25V 2.2W 18NC SMT Power Mosfet - DirectFETIsometric SQ
Infineon
Direct-FET N-CH 25V 17A
Infineon
Direct-FET N-CH 25V 17A
International Rectifier
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