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Part Datasheet Search > MOSFETs > Infineon > IRF6718L2TRPBF Datasheet PDF
IRF6718L2TRPBF
$ 41.523
IRF6718L2TRPBF Datasheet PDF (10 Pages)
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IRF6718L2TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
13 Pin
Case/Package
Direct-FET
Number of Channels
1 Channel
Number of Positions
13 Position
Drain to Source Resistance (on) (Rds)
1 mΩ
Polarity
N-Channel
Power Dissipation
4.3 W
Threshold Voltage
1.9 V
Drain to Source Voltage (Vds)
25 V
Breakdown Voltage (Drain to Source)
25 V
Continuous Drain Current (Ids)
61A
Rise Time
140 ns
Input Capacitance (Ciss)
6500pF @13V(Vds)
Fall Time
53 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
4.3W (Ta), 83W (Tc)

IRF6718L2TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
9.15 mm
Size-Width
7.1 mm
Size-Height
0.676 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF6718L2TRPBF Documents

Infineon
10 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRF6718L2 Documents

Infineon
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance.
Infineon
Direct-FET N-CH 25V 61A
International Rectifier
MOSFET 25V 1 N-CH HEXFET 0.7mOhms 64NC
International Rectifier
Trans MOSFET N-CH 25V 61A 13Pin Direct-FET L6 T/R
Infineon
Direct-FET N-CH 25V 61A
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