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Part Datasheet Search > MOSFETs > Infineon > IRF6727MTRPBF Datasheet PDF
IRF6727MTRPBF
$ 1.158
IRF6727MTRPBF Datasheet PDF (9 Pages)
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IRF6727MTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
Direct-FET
Power Rating
89 W
Number of Channels
1 Channel
Number of Positions
7 Position
Drain to Source Resistance (on) (Rds)
0.00122 Ω
Polarity
N-Channel
Power Dissipation
89 W
Threshold Voltage
1.8 V
Input Capacitance
6190 pF
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
32A
Rise Time
31 ns
Input Capacitance (Ciss)
6190pF @15V(Vds)
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)

IRF6727MTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.35 mm
Size-Width
5.05 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6727MTRPBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF6727 Documents

Infineon
Direct-FET N-CH 30V 32A
International Rectifier
Trans MOSFET N-CH 30V 32A 7Pin Direct-FET MX T/R
International Rectifier
Trans MOSFET N-CH 30V 32A 7Pin Direct-FET MX T/R
Infineon
Direct-FET N-CH 30V 32A
Infineon
Direct-FET N-CH 30V 32A
TT Electronics Resistors
International Rectifier
Power Mosfets
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