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Part Datasheet Search > MOSFETs > Infineon > IRF6894MTRPBF Datasheet PDF
IRF6894MTRPBF
$ 1.724
IRF6894MTRPBF Datasheet PDF (9 Pages)
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IRF6894MTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
7 Pin
Case/Package
Direct-FET
Power Rating
54 W
Number of Positions
6 Position
Polarity
N-Channel
Power Dissipation
2.8 W
Threshold Voltage
1.6 V
Drain to Source Voltage (Vds)
25 V
Continuous Drain Current (Ids)
32A
Rise Time
42 ns
Input Capacitance (Ciss)
4160pF @13V(Vds)
Input Power (Max)
2.1 W
Fall Time
14 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.1W (Ta), 54W (Tc)

IRF6894MTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.35 mm
Size-Width
5.05 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6894MTRPBF Documents

Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.19 MByte

IRF6894 Documents

Infineon
Direct-FET N-CH 25V 32A
International Rectifier
Trans MOSFET N-CH 25V 32A 7Pin Direct-FET MX T/R
International Rectifier
MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26NC
Infineon
Direct-FET N-CH 25V 32A
Infineon
25V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 33 amperes optimized with low on resistance.
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