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IRF7101PBF Datasheet PDF - International Rectifier

Manufacturer:

International Rectifier

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET N-CH 20V 3.5A 8Pin SOIC Tube

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3D Model

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Documentation:

IRF7101PBF Datasheet (1 Pages)

IRF7101PBF Datasheet PDF (1 Pages)

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IRF7101PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Voltage Rating (DC)

20.0 V

Current Rating

3.50 A

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

0.15 Ω

Polarity

N-Channel, Dual N-Channel

Power Dissipation

2 W

Part Family

IRF7101

Threshold Voltage

3 V

Input Capacitance

320pF @15V

Drain to Source Voltage (Vds)

20 V

Breakdown Voltage (Drain to Source)

20 V

Continuous Drain Current (Ids)

3.50 A

Rise Time

10.0 ns

Thermal Resistance

62.5℃/W (RθJA)

Input Capacitance (Ciss)

320pF @15V(Vds)

Input Power (Max)

2 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Junction Temperature (Max)

150 ℃

View Datasheet >

IRF7101PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

5 mm

Size-Height

1.5 mm

Operating Temperature

-55℃ ~ 150℃

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IRF7101PBF Environmental

IRF7101PBF Function Overview

IRF7101PBF Documents

IRF7101PBF Datasheet

International Rectifier

1 Pages / 0.71 MByte

IRF7101PBF Other Datasheet PDF

International Rectifier

9 Pages / 0.25 MByte

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IRF7101PBF Datasheet PDF

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IRF7101TRPBF Datasheet PDF

International Rectifier

MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.1Ω; ID 3.5A; SO-8; PD 2W; VGS +/-12V

IRF7101PBF Datasheet PDF

International Rectifier

Trans MOSFET N-CH 20V 3.5A 8Pin SOIC Tube

IRF7101TR Datasheet PDF

International Rectifier

20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

IRF7101TR Datasheet PDF

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SOIC N-CH 20V 3.5A

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