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Part Datasheet Search > MOSFETs > International Rectifier > IRF7101TRPBF Datasheet PDF
IRF7101TRPBF
Part 3D Model
$ 0.426
IRF7101TRPBF Datasheet PDF (9 Pages)
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IRF7101TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
20.0 V
Current Rating
3.50 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
0.15 Ω
Polarity
N-Channel
Power Dissipation
2 W
Part Family
IRF7101
Threshold Voltage
3 V
Input Capacitance
320pF @15V
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20 V
Continuous Drain Current (Ids)
3.50 A
Rise Time
10.0 ns
Input Capacitance (Ciss)
320pF @15V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRF7101TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Cut Tape (CT)
Size-Length
5 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃

IRF7101TRPBF Documents

International Rectifier
9 Pages / 0.26 MByte
International Rectifier
9 Pages / 0.25 MByte

IRF7101 Documents

International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 20V 3.5A
IRF
HEXFET Power MOSFET
Infineon
SOIC N-CH 20V 3.5A
Infineon
SOIC N-CH 20V 3.5A
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.1Ω; ID 3.5A; SO-8; PD 2W; VGS +/-12V
International Rectifier
Trans MOSFET N-CH 20V 3.5A 8Pin SOIC Tube
International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 20V 3.5A
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