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IRF710PBF
$ 0.565
IRF710PBF Datasheet PDF (9 Pages)
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IRF710PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
36 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
3.6 Ω
Polarity
N-Channel
Power Dissipation
36 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
400 V
Continuous Drain Current (Ids)
2.00 A
Rise Time
9.9 ns
Input Capacitance (Ciss)
170pF @25V(Vds)
Input Power (Max)
36 W
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
36 W

IRF710PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
9.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
50

IRF710PBF Documents

VISHAY
9 Pages / 0.26 MByte
VISHAY
9 Pages / 0.26 MByte
VISHAY
3 Pages / 0.14 MByte

IRF710 Documents

VISHAY
MOSFET N-CH 400V 2A TO-220AB
International Rectifier
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Siliconix
MOSFET N-CH 400V 2A TO-220AB
Intersil
PWR MOS 400V/2A/3.6Ω N-CH
Vishay Semiconductor
Trans MOSFET N-CH 400V 2A 3Pin(3+Tab) TO-220AB
National Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2A I(D),TO-220AB
Infineon
SOIC N-CH 50V 3A
Infineon
SOIC N+P 25V 3.5A/2.3A
International Rectifier
Trans MOSFET N-CH 50V 3A 8Pin SOIC T/R
Infineon
SOIC P-CH 20V 2.3A
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