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Part Datasheet Search > MOSFETs > Infineon > IRF7311TR Datasheet PDF
IRF7311TR
Part 3D Model
$ 0.078
IRF7311TR Datasheet PDF (7 Pages)
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IRF7311TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOIC-8
Polarity
N-CH
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
6.6A
Rise Time
17 ns
Input Capacitance (Ciss)
900pF @15V(Vds)
Input Power (Max)
2 W
Fall Time
31 ns

IRF7311TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7311TR Documents

Infineon
7 Pages / 0.2 MByte
Infineon
10 Pages / 0.24 MByte

IRF7311 Documents

International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 20V 6.6A
IRF
HEXFET Power MOSFET
Infineon
SOIC N-CH 20V 6.6A
Infineon
SOIC N-CH 20V 6.6A
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.023Ω; ID 6.6A; SO-8; PD 2W; VGS +/-12V
International Rectifier
Trans MOSFET N-CH 20V 6.6A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH Si 20V 6.6A 8Pin SOIC T/R
Infineon
SOIC N-CH 20V 6.6A
International Rectifier
Trans MOSFET N-CH 20V 6.6A 8Pin SOIC
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