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Part Datasheet Search > MOSFETs > International Rectifier > IRF7314PBF Datasheet PDF
IRF7314PBF
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IRF7314PBF Datasheet PDF (7 Pages)
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IRF7314PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
-20.0 V
Current Rating
-5.30 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
53 mΩ
Polarity
P-Channel, Dual P-Channel
Power Dissipation
2 W
Part Family
IRF7314
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
-20.0 V
Continuous Drain Current (Ids)
-5.30 A
Rise Time
40 ns
Input Capacitance (Ciss)
780pF @15V(Vds)
Input Power (Max)
2 W
Fall Time
49 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃

IRF7314PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃

IRF7314PBF Documents

International Rectifier
7 Pages / 0.19 MByte

IRF7314 Documents

International Rectifier
MOSFET 2P-CH 20V 5.3A 8-SOIC
Infineon
SOIC P-CH 20V 5.3A
IRF
HEXFET Power MOSFET
Infineon
SOIC P-CH 20V 5.3A
Infineon
SOIC P-CH 20V 5.3A
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -20V; RDS(ON) 0.058Ω; ID -5.3A; SO-8; PD 2W; VGS +/-12
International Rectifier
Trans MOSFET P-CH 20V 5.3A 8Pin SOIC Tube
International Rectifier
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET P-CH 20V 5.2A 8Pin SOIC
International Rectifier
MOSFET 2P-CH 20V 5.2A 8SOIC
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