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Part Datasheet Search > MOSFETs > International Rectifier > IRF7316PBF Datasheet PDF
IRF7316PBF
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$ 0.327
IRF7316PBF Datasheet PDF (7 Pages)
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IRF7316PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-4.90 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
0.098 Ω
Polarity
P-Channel, Dual P-Channel
Power Dissipation
2 W
Part Family
IRF7316
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
-30.0 V
Continuous Drain Current (Ids)
-4.90 A
Input Capacitance (Ciss)
710pF @25V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃

IRF7316PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Size-Length
5 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃

IRF7316PBF Documents

International Rectifier
7 Pages / 0.19 MByte

IRF7316 Documents

International Rectifier
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 30V 4.9A
IRF
HEXFET POWER MOSFET
Infineon
SOIC P-CH 30V 4.9A
International Rectifier
Trans MOSFET P-CH 30V 4.9A 8Pin SOIC T/R
Infineon
SOIC P-CH 30V 4.9A
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -30V; RDS(ON) 0.042Ω; ID -4.9A; SO-8; PD 2W; VGS +/-20
Infineon
SOIC P-CH 30V 4.9A
Infineon
SOIC P-CH 30V 4.9A
Infineon
SOIC P-CH 30V 4.9A
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