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IRF7316QPBF
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IRF7316QPBF Datasheet PDF (7 Pages)
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IRF7316QPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC
Polarity
P-CH
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
4.9A
Rise Time
13 ns
Input Capacitance (Ciss)
710pF @25V(Vds)
Fall Time
32 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

IRF7316QPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon

IRF7316QPBF Documents

Infineon
7 Pages / 0.21 MByte

IRF7316 Documents

International Rectifier
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 30V 4.9A
IRF
HEXFET POWER MOSFET
Infineon
SOIC P-CH 30V 4.9A
International Rectifier
Trans MOSFET P-CH 30V 4.9A 8Pin SOIC T/R
Infineon
SOIC P-CH 30V 4.9A
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -30V; RDS(ON) 0.042Ω; ID -4.9A; SO-8; PD 2W; VGS +/-20
Infineon
SOIC P-CH 30V 4.9A
Infineon
SOIC P-CH 30V 4.9A
Infineon
SOIC P-CH 30V 4.9A
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