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Part Datasheet Search > MOSFETs > International Rectifier > IRF7329PBF Datasheet PDF
IRF7329PBF
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IRF7329PBF Datasheet PDF (1 Pages)
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IRF7329PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
-12.0 V
Current Rating
-9.20 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
30 mΩ
Polarity
P-Channel, Dual P-Channel
Power Dissipation
2 W
Part Family
IRF7329
Drain to Source Voltage (Vds)
12 V
Continuous Drain Current (Ids)
-9.20 A
Input Capacitance (Ciss)
3450pF @10V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRF7329PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Size-Length
5 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃

IRF7329PBF Documents

International Rectifier
1 Pages / 0.71 MByte

IRF7329 Documents

International Rectifier
-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 12V 9.2A
IRF
HEXFET POWER MOSFET
Infineon
SOIC P-CH 12V 9.2A
Infineon
SOIC P-CH 12V 9.2A
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
Infineon
SOIC P-CH 12V 9.2A
International Rectifier
MOSFET 2P-CH 12V 9.2A 8-SOIC
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