IRF7341QPBF Datasheet PDF - International Rectifier

●Description

●These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

●Benefits

●•  Advanced Process Technology

●•  Dual N-Channel MOSFET

●•  Ultra Low On-Resistance

●•  175°C Operating Temperature

●•  Repetitive Avalanche Allowed up to Tjmax

●•  Lead-Free