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Part Datasheet Search > MOSFETs > Infineon > IRF7342D2PBF Datasheet PDF
IRF7342D2PBF
Part 3D Model
$ 0.39
IRF7342D2PBF Datasheet PDF (11 Pages)
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IRF7342D2PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.105 Ω
Polarity
P-CH
Power Dissipation
2 W
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
3.4A
Rise Time
10 ns
Input Capacitance (Ciss)
690pF @25V(Vds)
Fall Time
22 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2W (Ta)

IRF7342D2PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7342D2PBF Documents

Infineon
11 Pages / 0.19 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte

IRF7342D2 Documents

International Rectifier
-55V FETKY - MOSFET and Schottky Diode in a SO-8 package
Infineon
SOIC P-CH 55V 3.4A
Infineon
SOIC P-CH 55V 3.4A
International Rectifier
Trans MOSFET P-CH 55V 3.4A 8Pin SOIC
International Rectifier
Dual P-Channel 55V 2W 26NC Hexfet Power Mosfet Surface Mount - SOIC-8
Infineon
SOIC P-CH 55V 3.4A
International Rectifier
-55V FETKY - MOSFET and Schottky Diode in a SO-8 package
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