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Part Datasheet Search > MOSFETs > Infineon > IRF7342QTRPBF Datasheet PDF
IRF7342QTRPBF
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IRF7342QTRPBF Datasheet PDF (8 Pages)
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IRF7342QTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Channels
2 Channel
Polarity
P-CH
Power Dissipation
2 W
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
3.4A
Rise Time
10 ns
Input Capacitance (Ciss)
690pF @25V(Vds)
Input Power (Max)
2 W
Fall Time
22 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

IRF7342QTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7342QTRPBF Documents

Infineon
8 Pages / 0.17 MByte
Infineon
3 Pages / 0.63 MByte

IRF7342 Documents

International Rectifier
MOSFET 2P-CH 55V 3.4A 8-SOIC
Infineon
SOIC P-CH 55V 3.4A
IRF
Power MOSFET
Infineon
SOIC P-CH 55V 3.4A
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -55V; RDS(ON) 0.105Ω; ID -3.4A; SO-8; PD 2W; VGS +/-20
Infineon
SOIC P-CH 55V 3.4A
International Rectifier
Trans MOSFET P-CH 55V 3.4A 8Pin SOIC Tube
Infineon
SOIC P-CH 55V 3.4A
International Rectifier
Trans MOSFET P-CH 55V 3.4A 8Pin SOIC
Infineon
SOIC P-CH 55V 3.4A
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