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Part Datasheet Search > MOSFETs > Infineon > IRF7351TRPBF Datasheet PDF
IRF7351TRPBF
Part 3D Model
$ 0.542
IRF7351TRPBF Datasheet PDF (10 Pages)
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IRF7351TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0137 Ω
Polarity
N-Channel
Power Dissipation
2 W
Threshold Voltage
4 V
Input Capacitance
1330 pF
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
8A
Rise Time
5.9 ns
Input Capacitance (Ciss)
1330pF @30V(Vds)
Input Power (Max)
2 W
Fall Time
6.7 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2 W

IRF7351TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7351TRPBF Documents

Infineon
10 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.14 MByte

IRF7351 Documents

Infineon
60V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 60V 8A
Infineon
SOIC N-CH 60V 8A
International Rectifier
Trans MOSFET N-CH 60V 8A 8Pin SOIC T/R
International Rectifier
IRF7351PBF Series 60V 8A 17.8mOhm SMT Hexfet Power Mosfet - SOIC-8
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