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Part Datasheet Search > Transistors > Infineon > IRF7389TR Datasheet PDF
IRF7389TR
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IRF7389TR Datasheet PDF (10 Pages)
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IRF7389TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOIC-8
Polarity
N+P
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
7.3A/5.3A
Input Capacitance (Ciss)
650pF @25V(Vds)
Input Power (Max)
2.5 W

IRF7389TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7389TR Documents

Infineon
10 Pages / 0.2 MByte
Infineon
3 Pages / 0.02 MByte

IRF7389 Documents

International Rectifier
N,P채널 HEXFET, Vd = 30V, Rds = 0.029Ω, Id = 7.3A, Vd = -30V, Rds = 0.058Ω, Id = -5.3A, SOIC8 패키지
Infineon
SOIC N+P 30V 7.3A/5.3A
IRF
HEXFET Power MOSFET
Infineon
SOIC N+P 30V 7.3A/5.3A
Infineon
SOIC N+P 30V 7.3A/5.3A
International Rectifier
Trans MOSFET N/P-CH 30V 7.3A/5.3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N/P-CH 30V 7.3A/5.3A 8Pin SOIC Tube
Infineon
SOIC N+P 30V 7.3A/5.3A
International Rectifier
MOSFET N+P 30V 5.3A 8-SOIC
Infineon
30V 1N-1P Channel HEXFET Power MOSFET in a SO-8 package
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