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Part Datasheet Search > MOSFETs > Infineon > IRF7402PBF Datasheet PDF
IRF7402PBF
Part 3D Model
$ 2.465
IRF7402PBF Datasheet PDF (8 Pages)
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IRF7402PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Polarity
N-CH
Power Dissipation
2.5W (Ta)
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
6.8A
Rise Time
47 ns
Input Capacitance (Ciss)
650pF @15V(Vds)
Fall Time
32 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7402PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7402PBF Documents

Infineon
8 Pages / 0.17 MByte
Infineon
9 Pages / 0.12 MByte

IRF7402 Documents

International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 20V 6.8A
IRF
HEXFET Power MOSFET
Infineon
SOIC N-CH 20V 6.8A
International Rectifier
MOSFET, 20V, 6.8A, 35MOHM, 14NC QG, SO-8
International Rectifier
Trans MOSFET N-CH 20V 6.8A 8Pin SOIC T/R
International Rectifier
MOSFET N-CH 20V 6.8A 8-SOIC
Infineon
SOIC N-CH 20V 6.8A
Infineon
SOIC N-CH 20V 6.8A
International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market
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