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Part Datasheet Search > MOSFETs > Infineon > IRF7406PBF Datasheet PDF
IRF7406PBF
Part 3D Model
$ 0.109
IRF7406PBF Datasheet PDF (9 Pages)
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IRF7406PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.045 Ω
Polarity
P-Channel
Power Dissipation
1.6 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
5.8A
Rise Time
33 ns
Input Capacitance (Ciss)
1100pF @25V(Vds)
Fall Time
47 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta)

IRF7406PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7406PBF Documents

Infineon
9 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
8 Pages / 0.11 MByte

IRF7406 Documents

International Rectifier
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC P-CH 30V 5.8A
IRF
HEXFET POWER MOSFET
Infineon
SOIC P-CH 30V 5.8A
Infineon
SOIC P-CH 30V 5.8A
International Rectifier
Trans MOSFET P-CH 30V 5.8A 8Pin SOIC T/R
International Rectifier
Trans MOSFET P-CH 30V 5.8A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 30V 6.7A 8Pin SOIC T/R
Infineon
SOIC P-CH 30V 6.7A
Infineon
SOIC P-CH 30V 5.8A
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