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IRF740PBF
$ 0.907
IRF740PBF Datasheet PDF (10 Pages)
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IRF740PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
400 V
Current Rating
10.0 A
Case/Package
TO-220-3
Power Rating
125 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.55 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
4 V
Input Capacitance
1400pF @25V
Drain to Source Voltage (Vds)
400 V
Breakdown Voltage (Drain to Source)
400 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
27 ns
Input Capacitance (Ciss)
1400pF @25V(Vds)
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125 W

IRF740PBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
15.49 mm
Operating Temperature
-55℃ ~ 150℃

IRF740PBF Documents

Vishay Semiconductor
10 Pages / 0.26 MByte
Vishay Semiconductor
9 Pages / 0.26 MByte
Vishay Semiconductor
2 Pages / 0.06 MByte

IRF740 Documents

ST Microelectronics
Trans MOSFET N-CH 400V 10A 3Pin(3+Tab) TO-220
Vishay Siliconix
Trans MOSFET N-CH 400V 10A 3Pin(3+Tab) TO-220AB
International Rectifier
HEXFET, N채널, Vd = 200V, Rds = 0.55Ω, Id = 10A, TO-220
Fairchild
Trans MOSFET N-CH Si 400V 10A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 400V 10A 3Pin(3+Tab) TO-220AB
Semelab
10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Intersil
10A, 400V, 0.55Ω, N-Channel Power MOSFET
Vishay Intertechnology
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
ON Semiconductor
IRF740
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