IRF7413QPBF Datasheet PDF - International Rectifier

●Description

●These HEXFET® Power MOSFET"s in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET"s are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

●Advanced Process Technology

●Ultra Low On-Resistance

●N Channel MOSFET

●Surface Mount

●Available in Tape & Reel

●150°C Operating Temperature

●Lead-Free