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Part Datasheet Search > MOSFETs > Infineon > IRF7416QPBF Datasheet PDF
IRF7416QPBF
Part 3D Model
$ 0.131
IRF7416QPBF Datasheet PDF (9 Pages)
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IRF7416QPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
35 mΩ
Polarity
P-Channel
Power Dissipation
2.5 W
Part Family
IRF7416Q
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
49 ns
Input Capacitance (Ciss)
1700pF @25V(Vds)
Fall Time
60 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

IRF7416QPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm
Operating Temperature
-55℃ ~ 150℃

IRF7416QPBF Documents

Infineon
9 Pages / 0.23 MByte
Infineon
9 Pages / 0.26 MByte

IRF7416 Documents

International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC
Infineon
SOIC P-CH 30V 10A
IRF
Power MOSFET(Vdss=-30V, Rds(on)=0.02Ω)
TT Electronics Resistors
Infineon
SOIC P-CH 30V 10A
Infineon
SOIC P-CH 30V 10A
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.02Ω; ID -10A; SO-8; PD 2.5W; VGS +/-20V; -55
International Rectifier
MOSFET P-CH 30V 10A 8-SOIC
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC T/R
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